Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A,Referenced to 25 ° C
–30
–22
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = –24 V,
V GS = 25 V,
V GS = –25 V
V GS = 0 V
V DS = 0 V
V DS = 0 V
–1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A,Referenced to 25 ° C
V GS = –10 V, I D = –4 A
–1
–1.8
4
44
–3
50
V
mV/ ° C
m ?
On–Resistance
V GS = –4.5 V, I D = –3.4 A
V GS = –10 V, I D = –4 A;T J =125 °
67
60
75
70
I D(on)
On–State Drain Current
V GS = –10 V, V DS = –5 V
–20
A
g FS
Forward Transconductance
V DS = –5 V,
I D = –4 A
8.4
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –15 V,
f = 1.0 MHz
V GS = 0 V,
470
126
61
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –15 V,
V GS = –10 V,
V DS = –15 V,
V GS = –.5 V
I D = –1 A,
R GEN = 6 ?
I D = –4 A,
7
12
16
6
6
2.1
14
22
29
12
8.1
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
2
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = –1.3 A
(Note 2)
–0.77
–1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a)
78°C/W when
mounted on a 1in 2 pad
of 2 oz copper
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
Si3457DV Rev A 1 (W)
相关PDF资料
SI3458BDV-T1-GE3 MOSFET N-CH 60V 4.1A 6-TSOP
SI3460BDV-T1-GE3 MOSFET N-CH 20V 8A 6-TSOP
SI3460DV-T1-E3 MOSFET N-CH 20V 5.1A 6TSOP
SI3464DV-T1-GE3 MOSFET N-CH D-S 20V 6-TSOP
SI3467DV-T1-GE3 MOSFET P-CH 20V 3.8A 6-TSOP
SI3473DV-T1-GE3 MOSFET P-CH D-S 12V 6-TSOP
SI3483DV-T1-GE3 MOSFET P-CH D-S 30V 6-TSOP
SI3495DV-T1-GE3 MOSFET P-CH 20V 5.3A 6-TSOP
相关代理商/技术参数
SI3457DV_Q 功能描述:MOSFET SSOT6 SINGLE PCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3457DV-T1 功能描述:MOSFET 30V 4.3A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3457DV-T1-E3 功能描述:MOSFET 30V 4.3A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3458-B01-IM 制造商:Silicon Laboratories Inc 功能描述:POWER OVER ETHERNET CHIP QFN 56PIN 8X8MM - Bulk
SI3458BDV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET
SI3458BDV_09 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET
SI3458BDV-T1-E3 功能描述:MOSFET 60V 4.1A 3.3W 100mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3458BDV-T1-E3 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 60V 4.1A TSOP